GP120
Goodpoly
PPTC ThermistorsGPxxx Series PPTC Thermistors (PPTC Resettable Fuses)
Shenzhen Goodpoly Electron Co., Ltd.
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Radial leaded devices Very high voltage surge capabilities Available in lead-free version
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Agency Recognition: UL¡¢
TUV
Electrical Characteris
GP1200
Diotec Electronics
(GP1xxx) High Voltage Diode RectifiersDIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
a D . VOIDw FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION w (Solder Voids: Typical < 2%, Max. < 10% of Die Ar
GP1200ESM33
Dynex Semiconductor
High Reliability Single Switch IGBT Module Advance InformationGP1200ESM33
GP1200ESM33
High Reliability Single Switch IGBT Module Advance Information
Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001
FEATURES
s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substr
GP1200FSM18
Dynex Semiconductor
Hi-Reliability Single Switch IGBT ModuleGP1200FSM18
GP1200FSM18
Hi-Reliability Single Switch IGBT Module
DS5410-1.2 January 2001
FEATURES
s s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (m
GP1200FSS18
Dynex Semiconductor
Single Switch IGBT ModuleGP1200FSS18
GP1200FSS18
Single Switch IGBT Module
Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module
KEY PARAMETERS V
GP1201FSS18
Dynex Semiconductor
Single Switch Low V IGBT ModuleGP1201FSS18
GP1201FSS18
Single Switch Low VCE(SAT) IGBT Module
DS5411-1.1 January 2001
FEATURES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module
KEY PARAMETERS VCES (typ) VCE(s