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GP120 전자부품 데이터시트



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GP120  

Goodpoly
Goodpoly

GP120

PPTC Thermistors

GPxxx Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge capabilities Available in lead-free version ¡÷ Agency Recognition: UL¡¢ TUV Electrical Characteris



GP1200  

Diotec Electronics
Diotec Electronics

GP1200

(GP1xxx) High Voltage Diode Rectifiers

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 a D . VOIDw FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION w (Solder Voids: Typical < 2%, Max. < 10% of Die Ar



GP1200ESM33  

Dynex Semiconductor
Dynex Semiconductor

GP1200ESM33

High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001 FEATURES s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substr



GP1200FSM18  

Dynex Semiconductor
Dynex Semiconductor

GP1200FSM18

Hi-Reliability Single Switch IGBT Module

GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (m



GP1200FSS18  

Dynex Semiconductor
Dynex Semiconductor

GP1200FSS18

Single Switch IGBT Module

GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS V



GP1201FSS18  

Dynex Semiconductor
Dynex Semiconductor

GP1201FSS18

Single Switch Low V IGBT Module

GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(s



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