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ISSUED DATE :2005/03/25 REVISED DATE : G L A9 4 Description Features P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GLA94 is designed for application requires high voltage. High voltage: VCEO=400V (min) at IC=1mA High current gain: IC=300mA at 25 Complementary with
ISSUED DATE :2001/10/04 REVISED DATE :2004/11/18C G L A4 4 Description NPN TRANSISTOR The GLA44 is designed for application requires for high voltage. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 R
G L A4 2 Description 1/1 NP N EP ITAXI AL PLANAR T RANSI STOR The GLA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0
Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : G L A2 N 7 0 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 675V 10 0.2A Description The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectivenes
G L A2 7 Description 1/2 NPN TRANSISTOR The GLA27 is designed for darlington amplifier high current gain collector current to 500mA. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimet
GLA 1A ... GLA 1M 5+ + 6 = * , * * & (& , * * & % * * & * + 5> : 9 7; : 1 ) 7; : $ ) 7= : $ ) 7== : $ ) #;@ # 14 $ 14 $ 14 $ 14 $ 14 $ 14 $ 14 $ Surface mount diode
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