파트넘버.co.kr GJ882 데이터시트 검색

GJ882 전자부품 데이터시트



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GJ882  

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GJ882

NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2002/12/13 REVISED DATE :2005/08/10B GJ882 Description NP N EP ITAX I AL PL ANAR T RANSI STOR The GJ882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and relay driver. Package Di




관련 부품 GJ8 상세설명

GJ88LS02  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance



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GTM

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GJ85T03  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GJ85T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A Description The GJ85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance



GTM
GTM

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GJ80N03  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GJ80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GJ80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec



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GTM

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GJ80LS02  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A Description The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance



GTM
GTM

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GJ8050  

  
NPN EPITAXIAL TRANSISTOR

ISSUED DATE :2005/05/06 REVISED DATE : GJ8050 Description Features NPN EPITAXIAL TRANSISTOR The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8550 Package Dimensions



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GJ88L02  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 88A The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec



GTM
GTM

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