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Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance
Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GJ85T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A Description The GJ85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GJ80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GJ80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec
Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A Description The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance
ISSUED DATE :2005/05/06 REVISED DATE : GJ8050 Description Features NPN EPITAXIAL TRANSISTOR The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8550 Package Dimensions
Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 88A The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec
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