GJ8550
GTM
PNP EPITAXIAL TRANSISTOR
CORPORATION
GJ8550
Description Features
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC:
GJ85T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GJ85T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
Description
The GJ85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
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GJ85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/28 REVISED DATE :
GJ85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 85A
The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec
GTM
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