Datasheet GJ8050 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GJ8050	NPN EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : GJ8050 Description Features NPN EPITAXIAL TRANSISTOR The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. High Collector current (IC: 1.5A) Complementary to GJ8550 Package Dimensions	GTM

GJ8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GJ8550	PNP EPITAXIAL TRANSISTOR CORPORATION GJ8550 Description Features PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. High Collector current (IC: 1.5A) Complementar	GTM
GJ88L02	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 88A The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resis	GTM
GJ85L02	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GJ85L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 6m 85A The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resis	GTM

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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