Datasheet GJ4672 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GJ4672	NPN EPITAXIAL SILICON TRANSISTOR ISSUED DATE :2005/07/15 REVISED DATE : GJ4672 Description Features NPN EPITAXIAL SILICON TRANSISTOR The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Pac	GTM

GJ4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GJ42C	PNP EPITAXIAL PLANAR TRANSISTOR ISSUED DATE :2005/05/12 REVISED DATE : GJ42C Description Features P N P EP I TAXI AL PL AN AR T R AN SI ST O R The GJ42C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ41C Package Dimensions TO-252 REF. A	GTM
GJ405	P-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : GJ405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32m -18A The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistan	GTM
GJ4M	Diode ( Rectifier )	American Microsemiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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