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Datasheet GJ1182 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GJ1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR
CORPORATION
G J 11 8 2
Description Features
The GJ1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
ISSUED DATE :2005/10/06 REVISED DATE :
P NP S ILI CO N E PITAX I AL PL ANAR T RANSI STOR
Package Dimensions TO-2 |
GTM |
GJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GJ1084 | 5A Low Dropout Positive Adjustable |
GTM |
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GJ1952 | PNP HIGH SPEED SWITCHING TRANSISTOR |
GTM |
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GJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |
GTM |
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Número de pieza | Descripción | Fabricantes | |
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