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ISSUED DATE :2005/10/03 REVISED DATE : GI5103 Description Features NPN HIGH SPEED SWITCHING TRANSISTOR The GI5103 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at
Pb Free Plating Product ISSUED DATE :2005/12/16 REVISED DATE : GI50L02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 15m 45A The GI50L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
ISSUED DATE :2005/05/06 REVISED DATE : GI5706 Description Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GI5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable
GI500 THRU GI510 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-201AD Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical IR less than 0.1µA ♦ Construction
GI500 THRU GI510 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-201AD Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical IR less than 0.1µA ♦ Construction
GI500 THRU GI510 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-201AD Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical IR less than 0.1µA ♦ Construction
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