GI31C 전자부품 데이터시트

ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B GI3669 Description Package Dimensions NPN EPITAXIAL PLANAR T RANSISTOR The GI3669 is designed for using in power amplifier applications, power switching applications. TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.

Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GI3403 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200m -10A The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and

ISSUED DATE :2005/05/12 REVISED DATE : GI32C Description Features P NP EP ITAXI AL PL ANAR T RANSI STOR The GI32C is designed for use in general purpose amplifier and switching applications. *Complementary to GI31C Package Dimensions TO-251 REF. A B C D E F Millimeter Min.

Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B GI3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 18A The GI3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C GI3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GI3310 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. T