GI122 전자부품 데이터시트

www.partnumber.co.kr GI1401 thru GI1404 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 260

ISSUED DATE :2005/07/25 REVISED DATE : GI1386 Description Features PNP EPITAXIAL SILICON TRANSISTOR The GI1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions TO-251 REF. A

ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GI127 Features PNP EPITAXIAL PLANAR T RANSISTOR Description The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251

ISSUED DATE :2005/06/07 REVISED DATE : GI1202 Description Features PNP EPITAXIAL PLANAR SILICON TRANSISTOR The GI1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications. *Large current capacitance and wide ASO *Low collector-t

ISSUED DATE :2005/09/05 REVISED DATE : GI1060 Description Features NPN EPITAXIAL PLANAR T RANSISTOR The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V

ISSUED DATE :2005/10/03 REVISED DATE : GI1952 Description Features PNP HIGH SPEED SWITCHING TRANSISTOR The GI1952 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A High speed switching, typically tf =0.15 s