Datasheet GE630 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GE630	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/06/24 REVISED DATE : GE630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 400m 9A The GE630 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti	GTM

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GE200NB60S	N-CHANNEL IGBT STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V ■ ■ ■ ■ ■ High input impedance (voltage driven) Low on-voltage drop (Vcesat)	ST Microelectronics

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