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Datasheet GE4953 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GE4953 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR GEMOS
MOS FIELD EFFECT TRANSISTOR
GE4953
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V |
GEMOS |
GE4 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GE40N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
GTM |
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GE4953 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR |
GEMOS |
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GE4407 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
GTM |
Esta página es del resultado de búsqueda del GE4953. Si pulsa el resultado de búsqueda de GE4953 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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