GE13003
GTM
NPN SILICON POWER TRANSISTOR
ISSUED DATE :2005/01/12 REVISED DATE :
GE13003
Description
NPN SILICON POWER TRANSISTOR
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115
GE13007
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
ISSUED DATE :2005/01/12 REVISED DATE :
GE13007
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Description
The GE13007 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0
GTM
PDF
GE13005
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
ISSUED DATE :2005/01/12 REVISED DATE :
GE13005
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Description
The GE13005 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0
GTM
PDF