GDZ11
Pan Jit
AXIAL LEAD ZENER DIODESDATA SHEET
GDZ2.0~GDZ56
AXIAL LEAD ZENER DIODES
VOLTAGE 2.0 to 56 Volts
POWER
FEATURES
• Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available :
Normal :
GDZ11A
Formosa MS
Zener diodeZener diode
GDZ2.0 Thru GDZ56
VOLTAGE 2.0 to 56 Volts POWER 500 mWatts
FEATURES
• Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DA
GDZ11B
Formosa MS
Zener diodeZener diode
GDZ2.0 Thru GDZ56
VOLTAGE 2.0 to 56 Volts POWER 500 mWatts
FEATURES
• Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DA
GDZ11B
SynSemi
Zener Diode ( Rectifier )0.40 0.25
GDZ Series
VZ : 2.2 to 36 Volts PD : 200 mW
FEATURES :
• Silicon planar power zener diodes. • Low Zener impredance and low leakage current • Popular in Asian designs • Compact surface miunt device • Ideal for automated
GDZ11B
EIC
Zener Diode ( Rectifier )GDZ Series
VZ : 2.2 to 36 Volts PD : 200 mW
FEATURES :
• Silicon planar power zener diodes. • Low Zener impredance and low leakage current • Popular in Asian designs • Compact surface miunt device • Ideal for automated mounting • Pb / RoHS Free
MEC
GDZ11B-G
Vishay
Small Signal Zener Diodeswww.vishay.com
GDZ-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.0 to 36 5
Pulse current Single
UNIT V mA
FEATURES
• Silicon plana