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Datasheet GDSSF2418B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GDSSF2418B   MOSFET ( Transistor )

DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GDSSF2418B GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V
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datasheet GDSSF2418B pdf

GDSSF24 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GDSSF2429

MOSFET ( Transistor )

GDSSF2429 DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V ● High Power and cur
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GDSSF2449

MOSFET ( Transistor )

GDSSF2449 DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID = -5
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GDSSF2418EBK

MOSFET ( Transistor )

DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GDSSF2418EBK GENERAL FEATURES ● VDS = 20V,ID =6A RD
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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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