파트넘버.co.kr GDSSF2336 데이터시트 검색

GDSSF2336 전자부품 데이터시트



GDSSF2336 전자부품 회로 및
기능 검색 결과



GDSSF2336  

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GDSSF2336

MOSFET ( Transistor )

GDSSF2336 DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL




관련 부품 GDSSF23 상세설명

GDSSF2318E  

  
MOSFET ( Transistor )

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating:2000V HBM ●



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GDSSF2314  

  
MOSFET ( Transistor )

GDSSF2314 DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(O



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GDSSF2307  

  
MOSFET ( Transistor )

GDSSF2307 DESCRIPTION The SSF2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @



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GDSSF2305  

  
MOSFET ( Transistor )

GDSSF2305 DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 114mΩ @



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GDSSF2300A  

  
MOSFET ( Transistor )

GDSSF2300A DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(



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GDSSF2300  

  
MOSFET ( Transistor )

GDSSF2300 DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON



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