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ISSUED DATE :2004/09/20 REVISED DATE : GD551SD Description S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 5 A Package Dimensions The GD551SD is designed for low power rectification and high reliability. REF. A A1 A2 D E
DIP Switches GDH Series, Half Pitch, Low Profile, SMT Features I I Bifurcated gold wiping contact system (gold to gold contact system) Tape seal standard, with corner notch Vacuum pick and place compatible Half pitch .050" terminal spacing Shipped in the OFF position, ON position on request DIP
Zener diode GDZ2.0 Thru GDZ56 VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass DO-34 • Term
GigaDevice Semiconductor Inc. GD32F103xx ARM® Cortex™-M3 32-bit MCU Datasheet Table of Contents GD32F103xx List of Figures............................................................................................................................. 3 List of Tables..............................
Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: [email protected] Web: http://www.frontierusa.com 500m WATT ZENER DIODE GDZ2.0A THRU GDZ36D FEATURES z LOW COST z SMALL SIZE z GLASS SEALED 1.02(26.0) MIN .106(2.9)
ISSUED DATE :2004/11/15 REVISED DATE : GDMBZ5221B~GDMBZ5270B Description ZENER DIODES Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15
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