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Datasheet GBPC3506 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | GBPC3506 | Diode ( Rectifier ) |
 American Microsemiconductor |
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| 25 | GBPC3506 | 35A GLASS PASSIVATED BRIDGE RECTIFIER GBPC35005/W - GBPC3510/W
35A GLASS PASSIVATED BRIDGE RECTIFIER Features
· · · · · · · · Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 400A Peak Electrically Isolated Metal Base for Maximum Heat Dissipa |
 Diodes Incorporated |
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| 24 | GBPC3506 | GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Bulletin I27505 rev. G 10/03
GBPC.. Series
SINGLE PHASE BRIDGE Features
Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Polarity symbols are moulded on body of the plastic box Center hole fixing Glass passivated diode chips E |
 General Semiconductor |
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| 23 | GBPC3506 | HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 35 Amperes) SHANGHAI SUNRISE ELECTRONICS CO., LTD. GBPC35005 THRU GBPC3510
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 35A
FEATURES
• Glass passivated junction chip • Surge overload rating: 400 A peak • Low profile design • 1/4" universal fasten terminal and φ.04" lead |
 Pan Jit International Inc. |
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