GBJ35G 전자부품 데이터시트

WTE POWER SEMICONDUCTORS GBJ35A – GBJ35M Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A GBJ-6 Dim Min Max 29.7 30.3 A 19.7 20.3 B — 5.0 C 17.0 18.0 D 3.8 4.2 E 3.1Ø 3.4Ø G 2.3 2.7 H 0.9 1.1 J 1.8 2.2 K 0.6 0.8 L 4.4

WTE POWER SEMICONDUCTORS GBJ35A – GBJ35M Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A GBJ-6 Dim Min Max 29.7 30.3 A 19.7 20.3 B — 5.0 C 17.0 18.0 D 3.8 4.2 E 3.1Ø 3.4Ø G 2.3 2.7 H 0.9 1.1 J 1.8 2.2 K 0.6 0.8 L 4.4

WTE POWER SEMICONDUCTORS GBJ35A – GBJ35M Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A GBJ-6 Dim Min Max 29.7 30.3 A 19.7 20.3 B — 5.0 C 17.0 18.0 D 3.8 4.2 E 3.1Ø 3.4Ø G 2.3 2.7 H 0.9 1.1 J 1.8 2.2 K 0.6 0.8 L 4.4

WTE POWER SEMICONDUCTORS GBJ35A – GBJ35M Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A GBJ-6 Dim Min Max 29.7 30.3 A 19.7 20.3 B — 5.0 C 17.0 18.0 D 3.8 4.2 E 3.1Ø 3.4Ø G 2.3 2.7 H 0.9 1.1 J 1.8 2.2 K 0.6 0.8 L 4.4

Single-Phase Glass Passivated Bridge Rectifier GBJ35005 – GBJ3510 Single-Phase Glass Passivated Bridge Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Glass passivated die construction • Low forward voltage drop • High current capabil

GBJ3506 thru GBJ3510 ® Pb Free Plating Product GBJ3506 thru GBJ3510 Pb 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS Features • Glass passivated chip junction • Low forward voltage drop • High surge overload rating of 350 A peak • Ideal for printed circuit board Mechanical Data