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GBC857 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC857 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1
GBC856 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1
GBC848 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GBC848 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1
GBC846 Description Package Dimensions 1/2 NPN EPITAXIAL PLANAR TRANSISTOR The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60
GBC817 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.
GBC807 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.
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