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ISSUED DATE :2005/10/21 REVISED DATE : GBC558 Description Features PNP SILICON TRANSISTOR The GBC558 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC548 D Package Dimensions E S1 TO-92 A S E A
ISSUED DATE :2005/10/21 REVISED DATE : GBC557 Description Features PNP SILICON TRANSISTOR The GBC557 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC547 D Package Dimensions E S1 TO-92 A S E A
ISSUED DATE :2005/10/21 REVISED DATE : GBC548 Description Features NPN SILICON TRANSISTOR The GBC548 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC558 D Package Dimensions E S1 TO-92 A S E A
ISSUED DATE :2005/10/21 REVISED DATE : GBC547 Description Features NPN SILICON TRANSISTOR The GBC547 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC557 D Package Dimensions E S1 TO-92 A S E A
ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B GBC546 Description Features NPN SILICON TRANSISTOR The GBC546 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC556 D Package Dimensions E S1 TO-92
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