Datasheet GBC548 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GBC548	NPN SILICON TRANSISTOR ISSUED DATE :2005/10/21 REVISED DATE : GBC548 Description Features NPN SILICON TRANSISTOR The GBC548 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC558 D Package Dimensions E S1 TO-92 A S E A	GTM

GBC Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GBC858	PNP EPITAXIAL TRANSISTOR GBC858 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2	GTM
GBC857	PNP EPITAXIAL TRANSISTOR GBC857 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC857 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2	GTM
GBC856	PNP EPITAXIAL TRANSISTOR GBC856 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2	GTM

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Número de pieza	Descripción	Fabricantes	PDF
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