Datasheet GAP3SHT33-CAL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GAP3SHT33-CAL	Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC A	GeneSiC

GAP3SHT33- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GAP3SHT33-CAU	Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300	GeneSiC
GAP3SHT33-CAL	Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300	GeneSiC

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