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Datasheet GAL16V8Z-12QJ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GAL16V8Z-12QJ | Zero Power E2CMOS PLD GAL16V8Z GAL16V8ZD
Zero Power E2CMOS PLD Features
• ZERO POWER E2CMOS TECHNOLOGY — 100µA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 12 ns Maximum |  Lattice Semiconductor | cmos |
GAL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GAL16LV8 | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 2 | GAL16LV8C-10LJ | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 3 | GAL16LV8C-15LJ | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 4 | GAL16LV8C-7LJ | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 5 | GAL16LV8D-3LJ | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 6 | GAL16LV8D-5LJ | Low Voltage E2CMOS PLD Generic Array Logic Ne Tolew 5V Inp rant u 16L ts on V8D
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 3.3V LOW VOLTAGE 16V8 ARCHITECTURE — JEDEC-Compatible 3.3V I Lattice Semiconductor cmos | | |
| 7 | GAL16V8 | High Performance E2CMOS PLD Generic Array Logic GAL16V8
High Performance E2CMOS PLD Generic Array Logic™ Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOL Lattice Semiconductor cmos | |
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| Número de pieza | Descripción | Fabricantes | |
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