Datasheet GA10JT12-CAL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GA10JT12-CAL	Normally - OFF Silicon Carbide Junction Transistor GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  250 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Posit	GeneSiC

GA10JT12- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GA10JT12-CAL	Normally - OFF Silicon Carbide Junction Transistor GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  250 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output C	GeneSiC
GA10JT12-263	Normally - OFF Silicon Carbide Junction Transistor Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance �	GeneSiC
GA10JT12-247	Normally - OFF Silicon Carbide Junction Transistor Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance �	GeneSiC

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