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Datasheet G500R4SB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G500R4SB | Diode, Rectifier |  American Microsemiconductor | diode |
G50 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G500R2 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | G500R4 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | G500R4SB | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | G50H603 | IGW50N60H3 IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW50N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGW50N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyof  Infineon Technologies data | | |
| 5 | G50N60HS | SGW50N60HS SGW50N60HS
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff  Infineon data | | |
| 6 | G50T60 | LOW LOSS IGBT IGW50N60T
TRENCHSTOP™ Series
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for : - Frequency Converters - Uninterrupted Power Supply
TRENCHS Infineon Technologies igbt | |
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