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G4BC30UD 전자부품 데이터시트



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G4BC30UD  

International Rectifier
International Rectifier

G4BC30UD

IRG4BC30UD

PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter para




관련 부품 G4BC30 상세설명

G4BC30W  

  
IRG4BC30W

PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low



International Rectifier
International Rectifier

PDF



G4BC30FD  

  
IRG4BC30FD

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher e



International Rectifier
International Rectifier

PDF



G4BC30KD  

  
IRG4BC30KD

PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter dis



International Rectifier
International Rectifier

PDF




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