G4BC30UD
International Rectifier
IRG4BC30UDPD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter para
G4BC30W
IRG4BC30WPD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter • Low
International Rectifier
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G4BC30FD
IRG4BC30FDPD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher e
International Rectifier
PDF
G4BC30KD
IRG4BC30KDPD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter dis
International Rectifier
PDF