G4B
General Semiconductor
GLASS PASSIVATED JUNCTION RECTIFIERG4A THRU G4J
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 600 Volts
*
Case Style G4
Forward Current - 3.0 Amperes
FEATURES
♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically seale
G4BC20F
International Rectifier
IRG4BC20F
PD - 91602A
IRG4BC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribu
G4BC20FD
International Rectifier
IRG4BC20FD
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design p
G4BC20KD
International Rectifier
IRG4BC20KD
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15
G4BC20U
International Rectifier
IRG4BC20UPD - 91448D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distr
G4BC20UD
International Rectifier
IRG4BC20UDPD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design p
G4BC30FD
International Rectifier
IRG4BC30FDPD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tig
G4BC30KD
International Rectifier
IRG4BC30KDPD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high s