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G4B 전자부품 데이터시트



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G4B  

General Semiconductor
General Semiconductor

G4B

GLASS PASSIVATED JUNCTION RECTIFIER

G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts * Case Style G4 Forward Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically seale



G4BC20F  

International Rectifier
International Rectifier

G4BC20F

IRG4BC20F

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribu



G4BC20FD  

International Rectifier
International Rectifier

G4BC20FD

IRG4BC20FD

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design p



G4BC20KD  

International Rectifier
International Rectifier

G4BC20KD

IRG4BC20KD

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15



G4BC20U  

International Rectifier
International Rectifier

G4BC20U

IRG4BC20U

PD - 91448D INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20U UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distr



G4BC20UD  

International Rectifier
International Rectifier

G4BC20UD

IRG4BC20UD

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design p



G4BC30FD  

International Rectifier
International Rectifier

G4BC30FD

IRG4BC30FD

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tig



G4BC30KD  

International Rectifier
International Rectifier

G4BC30KD

IRG4BC30KD

PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high s



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