G16N50C
Vishay
SIHG16N50CSiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single
D
FEATURES
• Low Figure-of-Merit Ron x Qg
0.38
• 100 % Avalanche Tested • Gate