FZT869 전자부품 데이터시트

SMD Type Transistors NPN Transistors FZT853 (KZT853) ■ Features ● Collector Current Capability IC=6A ● Collector Emitter Voltage VCEO=100V ● Complementary to FZT953 SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 4 - SEPTEMBER 1997 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE FZT857 FZT957

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak FZT855 C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE FZT855 FZT9