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Datasheet FZT749 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | FZT749 | PNP HIGH PERFORMANCE TRANSISTOR Features
BVCEO > -25V IC = -3A High Continuous Current ICM = -8A Peak Pulse Current Low Saturation Voltage VCE(sat) < -300mV @ -1A Complementary NPN Type: FZT649 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qual |
 Diodes |
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| 3 | FZT749 | Medium Power Transistor SMD Type
Transistors
NPN Silicon Planar Medium Power Transistor
FZT749
0.1max +0.050.90
-0.05
+0.151.65 -0.15
Features
25 Volt VCEO. 3 Amp continuous current. Low saturation voltage. Excellent hFE specified up to 6A .
SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7 |
 Kexin |
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| 2 | FZT749 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE PARTMARKING DETAIL FZT649 FZT749
FZT749
C
E C B SYMBOL VCBO VCEO VEBO ICM IC P |
 Zetex Semiconductors |
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| 1 | FZT749 | PNP Low Saturation Transistor FZT749
Discrete Power & Signal Technologies July 1998
FZT749
C E
B
C
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Para |
 Fairchild Semiconductor |
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