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SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT690B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 400 at IC=1 Amp. Very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+
Features BVCEO > 140V BVCBO > 160V IC = 2A High Continuous Current NPN Darlington with Gain >10k Guaranteed hFE Specified up to 1A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for
SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT688B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: m
SMD Type Transistors 0.1max +0.050.90 -0.05 +0.151.65 -0.15 NPN Silicon Planar Medium Power Transistor FZT657 Features Low saturation voltage SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 C
Features • BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage • Complementary PNP Type – FZT755 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability A Pro
SMD Type Transistors 0.1max +0.050.90 -0.05 +0.151.65 -0.15 NPN Silicon Planar High Performance Transistor FZT653 Features Low saturation voltage Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collect
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