Datasheet FZT493A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FZT493A	NPN MEDIUM POWER HIGH GAIN TRANSISTOR A Product Line of Diodes Incorporated FZT493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > 60V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  High Gain Device > 500 at IC =150mA  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)	Diodes

FZT4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FZT458	NPN MEDIUM POWER TRANSISTOR Features  BVCEO > 400V  IC = 300mA High Continuous Current  Excellent hFE Characteristics up to 100mA  Low Saturation Voltage VCE(sat) < 200mV @ 20mA  Complementary PNP Type: FZT558  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.	Diodes Incorporated
FZT458	NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 JANUARY 1996 FEATURES * 400 Volt VCEO FZT458 C COMPLEMENTARY TYPE PARTMARKING DETAIL FZT558 FZT458 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volta	Zetex Semiconductors
FZT493	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 NOVEMBER 1995 7 C COMPLEMENTARY TYPE PARTMARKING DETAIL FZT593 FZT493 FZT493 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Co	Zetex Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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