FY8AAJ-03F
Renesas Technology
High-Speed Switching Use Nch Power MOS FETFY8AAJ-03F
High-Speed Switching Use Nch Power MOS FET
REJ03G0280-0100 Rev.1.00 Aug.20.2004
Features
• Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 28 mΩ • ID : 8 A
Outline
SOP-8
5,6,7,8
5 8 4 1
4
1,2,3. Source 4. Gate
FY8AAJ-03A
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FY8AAJ-03A
HIGH-SPEED SWITCHING USE
FY8AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN No-contact
q 4V DRIVE q VDSS ...................................................
Powerex Power Semiconductors
PDF
FY8AAJ-03A
HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FY8AAJ-03A
HIGH-SPEED SWITCHING USE
FY8AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN No-contact
q 4V DRIVE q VDSS ...................................................
Mitsubishi Electric Semiconductor
PDF