FSYE913A0D1 전자부품 데이터시트

FSYE430D, FSYE430R Data Sheet June 1999 File Number 4750 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power

FSYE23A0D, FSYE23A0R Data Sheet May 1999 File Number 4742 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power

Ordering number : ENN*6302 CMOS IC LC35256FM, FT-55U/70U 256K (32768 words × 8 bits) SRAM Control Pins: OE and CE Preliminary Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory

FSYE923A0D, FSYE923A0R TM Data Sheet June 2000 File Number 4773.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appl