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Datasheet FSJ9160 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | FSJ9160 | 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor
FSJ9055D, FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. En |
Intersil Corporation |
|
7 | FSJ9160D | 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor
FSJ9055D, FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. En |
Intersil Corporation |
|
6 | FSJ9160D1 | 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor
FSJ9055D, FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. En |
Intersil Corporation |
|
5 | FSJ9160D3 | 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs FSJ9160D, FSJ9160R
June 1998
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanc |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
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