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FS50 전자부품 데이터시트



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FS50  

Feeling Technology
Feeling Technology

FS50

LINEAR HALL-EFFECT SENSORS

FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Features Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in SIP-3L package FS50 Pb Free General Description The FS50 Hall-effect sensors accurately track extremely sma



FS50AS-03  

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

FS50AS-03

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3UM-18A HIGH-SPEED SWITCHING USE FS3UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VD



FS50AS-03  

Powerex Power Semiconductors
Powerex Power Semiconductors

FS50AS-03

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3UM-9 HIGH-SPEED SWITCHING USE FS3UM-9 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS



FS50ASJ-03  

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

FS50ASJ-03

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS ................



FS50ASJ-03  

Powerex Power Semiconductors
Powerex Power Semiconductors

FS50ASJ-03

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 1.5MAX. 10.5MAX. 0 –0 +0.3 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS .............



FS50ASJ-03F  

Renesas
Renesas

FS50ASJ-03F

N-channel Power MOS FET

FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-



FS50KM-06  

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

FS50KM-06

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 1.5MAX. 10.5MAX. 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS .............



FS50KM-06  

Powerex Power Semiconductors
Powerex Power Semiconductors

FS50KM-06

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ........



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