FS50
Feeling Technology
LINEAR HALL-EFFECT SENSORSFEELING TECHNOLOGY
LINEAR HALL-EFFECT SENSORS
Features
Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in SIP-3L package
FS50
Pb Free
General Description
The FS50 Hall-effect sensors accurately track extremely sma
FS50AS-03
Mitsubishi Electric Semiconductor
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS3UM-18A
HIGH-SPEED SWITCHING USE
FS3UM-18A
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VD
FS50AS-03
Powerex Power Semiconductors
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
FS3UM-9
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS
FS50ASJ-03
Mitsubishi Electric Semiconductor
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS3VS-10
HIGH-SPEED SWITCHING USE
FS3VS-10
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS ................
FS50ASJ-03
Powerex Power Semiconductors
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS3VS-16A
HIGH-SPEED SWITCHING USE
FS3VS-16A
OUTLINE DRAWING
r
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
1.5MAX.
10.5MAX.
0 –0
+0.3
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS .............
FS50ASJ-03F
Renesas
N-channel Power MOS FETFS50ASJ-03F
High-Speed Switching Use Nch Power MOS FET
Features
• Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZG-
FS50KM-06
Mitsubishi Electric Semiconductor
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS3VS-18A
HIGH-SPEED SWITCHING USE
FS3VS-18A
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
1.5MAX.
10.5MAX.
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
¡VDSS .............
FS50KM-06
Powerex Power Semiconductors
Nch POWER MOSFET HIGH-SPEED SWITCHING USEMITSUBISHI Nch POWER MOSFET
FS40SM-5
HIGH-SPEED SWITCHING USE
FS40SM-5
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ........