Datasheet FS20VSJ-3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FS20VSJ-3	High-Speed Switching Use Pch Power MOS FET FX20VSJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G0273-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S	Renesas Technology

FS20VS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FS20VS-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5	Mitsubishi Electric Semiconductor
FS20VS-5	Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FS40SM-6 HIGH-SPEED SWITCHING USE FS40SM-6 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ............................	Powerex Power Semiconductors
FS20VS-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FS4VS-12 HIGH-SPEED SWITCHING USE FS4VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 –0.5 +0.3 1.5MAX. 10.5MAX. 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS ..................................	Powerex Power Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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