FRK250D 전자부품 데이터시트

FRK254D, FRK254R, FRK254H June 1998 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 20A, 250V, RDS(on) = 0.170Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S

FRK254D, FRK254R, FRK254H June 1998 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 20A, 250V, RDS(on) = 0.170Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S

FRK254D, FRK254R, FRK254H June 1998 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 20A, 250V, RDS(on) = 0.170Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification FRK254 DESCRIPTION ·20A, 250V, RDS(on) = 0.17Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to t

FRK250D, FRK250R, FRK250H June 1998 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S

FRK250D, FRK250R, FRK250H June 1998 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 27A, 200V, RDS(on) = 0.100Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S