FQU3N25
250V N-Channel MOSFETFQD3N25 / FQU3N25
November 2000
QFET
FQD3N25 / FQU3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mi
Fairchild Semiconductor
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FQU3N50C
500V N-Channel MOSFETFQD3N50C/FQU3N50C 500V N-Channel MOSFET
QFET
FQD3N50C/FQU3N50C
500V N-Channel MOSFET
Features
• 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability
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Descri
Fairchild Semiconductor
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FQU3N60
600V N-Channel MOSFETFQD3N60 / FQU3N60
April 2000
QFET
FQD3N60 / FQU3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim
Fairchild Semiconductor
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