FQU3N30 전자부품 데이터시트

 
 

 
 
   
  
                            
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FQD3N25 / FQU3N25 November 2000 QFET FQD3N25 / FQU3N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mi

FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability ® Descri

FQD3N60 / FQU3N60 April 2000 QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim