Datasheet FQPF8N60CF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQPF8N60CF	600V N-Channel MOSFET www.DataSheet.co.kr FQPF8N60CF 600V N-Channel MOSFET February 2006 FRFET FQPF8N60CF 600V N-Channel MOSFET Features • • • • • • 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capab	Fairchild Semiconductor

FQPF8N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQPF8N60C	600V N-Channel MOSFET FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore	Fairchild Semiconductor
FQPF8N60	600V N-Channel MOSFET FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using	AOKE
FQPF8N60CF	600V N-Channel MOSFET Datasheet.es FQPF8N60CF 600V N-Channel MOSFET February 2006 FRFET FQPF8N60CF 600V N-Channel MOSFET Features • • • • • • 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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