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QFET % % % % % % & '(&)*+,-. /)Ω0+-.*+ 1 2 3 4 5 12 3 '5 .**6 ! 7 !!$ "
QFET & & & & & & ' (%'))*+,- .Ω/*,-)* 0 1 2 ) 3 01 2 )3 -))4 ! 5 !!$ "
FQPF4N80 September 2000 QFET FQPF4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
FQPF4N90 October 2001 QFET FQPF4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOS
FQPF4N20L December 2000 QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state
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