FQPF3N80C
Fairchild Semiconductor
800V N-Channel MOSFETFQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 10
FQPF3N80
800V N-Channel MOSFETFQPF3N80
September 2000
QFET
FQPF3N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
Fairchild Semiconductor
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