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QFET % % % % % % & '()*++,-./ /Ω0,.&+, 1 2 ( ( 3 12 4 +3 &++5 ! 6 !!$ "
FQPF3N25 November 2000 QFET FQPF3N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state re
QFET $ $ $ $ $ $ % &'())*+,- (Ω.*,%)* / 0 & ) 1 /0 ( 21 %))3 ! 4 !!5 "
FQPF3N80 September 2000 QFET FQPF3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
FQPF3N90 September 2000 QFET FQPF3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8 Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Descripti
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