Datasheet FQPF11P06 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQPF11P06	60V P-Channel MOSFET FQPF11P06 May 2001 QFET FQPF11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resist	Fairchild Semiconductor

FQPF11 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQPF11N50CF	500V N-Channel MOSFET FQPF11N50CF — N-Channel QFET® FRFET® MOSFET FQPF11N50CF N-Channel QFET® FRFET® MOSFET 500 V, 11 A, 550 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.	Fairchild Semiconductor
FQPF11P06	60V P-Channel MOSFET FQPF11P06 May 2001 QFET FQPF11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini	Fairchild Semiconductor
FQPF11N40C	400V N-Channel MOSFET FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ November 2013 Features • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) �	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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