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QFET $ $ $ $ $ $ % &'())*+,- .Ω/*,-)* 0 1 2) 3 01 -.3 -))4 ! 5 !!6 "
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
QFET % % % % % % % & '()*+,-.+ &Ω/,.)+, 0 1 & * 2 01 3 &2 )++4 ! 5 !!$ " )6*° 7 8
QFET $ $ $ $ $ $ % &'())*+,- (Ω.*,-)* / 0 1) 2 /0 -32 -))4 ! 5 !!6 "
FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res
FQP6N60C/FQPF6N60C QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailore
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