FQP630 전자부품 데이터시트



 QFET   $ $ $ $ $ $ % &'())*+
,- .Ω/*,-)* 0   1 2) 3 01 -.3     -))4 !   5 !!6  "

   
  
       

FQP6N45 January 2001 QFET FQP6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis

FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability



 QFET   % % % % % % % & '()*+,-
.+ &Ω/,.)+, 0   1 & * 2 01 3 &2     )++4 !   5 !!$  " )6*° 7  8      

  




 QFET   $ $ $ $ $ $ % &'())*+
,- (Ω.*,-)* /   0 1) 2 /0 -32     -))4 !   5 !!6  "

   
  
        

FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res