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500V N-Channel MOSFET Product specification FQP5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide super
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FQP5N60 热阻特性 参数名称 芯片对管壳热阻 芯片对环境的热阻 符号 RθJC RθJA SVD5N60AT 1.25 62.5 SVD5N60AF 3.79 62.5 单位 °C/W °C/W 关断特性参数(除非特殊说明,TC=25°C) 参 数 漏源击穿电压 漏源漏电流 栅源漏电流 栅极开启电压 导通电�
QFET % % % % % % & '()**+,-* .Ω/+-0*+ 1 2 . 3 4 12 . &4 0**5 ! 6 !!$ "
QFET % % % % % % % & '()&*+,-* .Ω/+-)*+ 0 1 & ' 2 01 3 &2 )**4 ! 5 !!$ " )3&° 6 7
FQP5N20L August 2001 QFET FQP5N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-stat
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