Datasheet FQP4N60C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQP4N60C	N-Channel MOSFET 4A, 600V, N沟道场效应晶体管产品参数规格书工业型号 FQP4N60C FQPF4N60C 公司型号 H4N60P H4N60F 通俗命名 4N60 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式条管装盒装箱装每管数量 50Pcs 4N60 Series N-Channel MOSFET 每盒数量每箱数�	HAOHAI

FQP4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQP4N90C	900V N-Channel MOSFET FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog	Fairchild Semiconductor
FQP4N90	900V N-Channel MOSFET FQP4N90 October 2001 QFET FQP4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min	Fairchild Semiconductor
FQP4N60	600V N-Channel MOSFET FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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